2SC250006 DATALEHDET,PIIRI,TOIMINNON
2SC250006 Datasheet PDF
| Valmistaja | Pakkaus | Kuvaus | Lämpötila | |
|---|---|---|---|---|
| Toshiba Semiconductor | Silicon Epitaxial Type Process) |
2SC250006 PDF | Min°C | Max°C |
- Toshiba Semiconductor 2SC2500
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) - Toshiba Semiconductor 2SC250006
Silicon Epitaxial Type Process) - 2SC2500A
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92VAR - 2SC2500B
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92VAR - 2SC2500C
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 - 2SC2500D
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92VAR - Toshiba Semiconductor 2SC2500_06
Silicon NPN Epitaxial Type (PCT Process) - Shindengen Electric 2SC2501
TRANSISTOR - Inchange Semiconductor Company Limited 2SC2502
Silicon Power Transistors - ETC[ETC] 2SC2504
2SC2504 - Inchange 2SC2507
Silicon Power Transistor - 2SC2508
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 6A I(C) | SOT-123VAR - TOSHIBA 2SC2509
SILICON EPITAXIAL PLANAR TYPE