2SJ20107 DATALEHDET,PIIRI,TOIMINNON
2SJ20107 Datasheet PDF
| Valmistaja | Pakkaus | Kuvaus | Lämpötila | |
|---|---|---|---|---|
| Toshiba Semiconductor | High-Power Amplifier Application |
2SJ20107 PDF | Min°C | Max°C |
- Toshiba Semiconductor 2SJ200
CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION) - Toshiba Semiconductor 2SJ20007
High Power Amplifier Application - 2SJ200O
TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR - 2SJ200Y
TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR - Toshiba Semiconductor 2SJ200_07
High Power Amplifier Application - Toshiba Semiconductor 2SJ201
CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS) - Toshiba Semiconductor 2SJ20107
High-Power Amplifier Application - Toshiba 2SJ20109
High-Power Amplifier Application - 2SJ201O
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR - 2SJ201Y
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR - Toshiba Semiconductor 2SJ201_07
High-Power Amplifier Application - NEC[NEC] 2SJ202
P-CHANNEL SWITCHING - NEC 2SJ202-T1
MOS field effect transistor - NEC 2SJ202-T2
MOS field effect transistor - Guangdong Kexin Industrial Co.,Ltd 2SJ203
Fied Effect Transistor